Energy Environ. Sci., 2026, 19,2938-2948
DOI: 10.1039/D6EE00301J, Paper

Shaopeng Liao, Guang Li, Mengqi Ren, Ying Peng, Weitao Zhao, Zichao Xu, Hongsen Cui, Chen Tao, Haibing Wang, Chen Wang, Fang Yao, Xiaojuan Cao, Jiwei Liang, Mingming Hu, Yansong Ge, Xuzhi Hu, Jian Wen, Weijun Ke, Guojia Fang
GBAM is used as buried interface modifier at room temperature. Co-annealing GBAM with perovskite layer optimizes bottom interface of wide-bandgap perovskite, achieving 29.07% for 2-terminal perovskite–perovskite tandem cells.
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