SK Hynix earmarks $38B for AI memory
SK Hynix outlined plans to invest KRW54 trillion ($38.3 billion) in two new semiconductor manufacturing plants in South Korea, stepping up production capacity to meet long-term demand for AI memory.
The South Korean chipmaker will invest KRW35.2 trillion in its Yongin Y2 fabrication plant in the Seoul Metropolitan Area, which will produce high-bandwidth memory (HBM) and other next-generation dynamic random access memory (DRAM) products. Meanwhile, KRW19.1 trillion is earmarked for a second facility, Cheongju M17, in central South Korea to manufacture NAND flash memory chips, with the company arguing the city “offers the fastest fab construction timeline”.
The latest investment forms part of a wider manufacturing push. In June, SK Hynix unveiled plans to invest KRW600 trillion in the Yongin Semiconductor Cluster and KRW100 trillion to expand its Cheongju production base.
Yongin Y2 will become the second of four planned fabs in the Yongin Semiconductor Cluster. Construction of the plant is due to begin in July 2027, while work on the Cheongju M17 fab is scheduled to start in February 2027. The company aims to complete all four planned fabrication plants by 2033, bringing forward the original timeline by 12 years.
The latest commitment comes amid strong demand for AI memory requiring large volumes of HBM. SK Hynix explained demand for NAND memory is “surging rapidly”, adding its investment followed “a thorough review of market demand”. Citing forecasts by Omdia, it noted global DRAM and NAND demand is expected to grow at a compound annual rate of 19% through 2030.
The company noted “in the AI era, technological competitiveness alone is not enough”, arguing the “ability to supply the required volume at the exact moment customers need it is the ultimate competitive advantage”.
In June, South Korean President Lee Jae-myung unveiled a long-term AI and semiconductor initiative led by Samsung Electronics and SK Hynix expected to exceed $1 trillion by 2035.
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