South Korean device cuts required components by 75%, boosts data processing speed by 4x

Researchers have developed a transistor technology that enables a single semiconductor device to perform multiple circuit functions simultaneously.
Developed by the Pohang University of Science and Technology, the new approach significantly simplifies circuit design and increases data processing speed by fourfold compared with conventional methods. As the number of functions increases, so do the number of circuits and transistors required.
Implementing complex circuit functions
Researchers also revealed that one of the key challenges in the semiconductor industry is integrating more functions into smaller chips. As the number of functions increases, so do the number of circuits and transistors required. However, when adding new functions to previously fabricated semiconductor chips, back-end-of-line (BEOL), processing must be conducted at temperatures below 400°C to protect the existing chip structure.
“This study demonstrates the possibility of implementing complex circuit functions at the level of a single device,” said Professor Byoung Hun Lee.
“We expect this technology to be widely applicable to the development of ultra-compact AI devices and three-dimensional integrated, highly-density semiconductor systems.”
The research team focused on zinc oxide(ZnO) and tellurium(Te). Both materials can be fabricated as thin, uniform films at temperatures below 200°C, making them promising candidates for next-generation semiconductor materials. By combining the two, the team created a ZnO–Te heterojunction transistor, according to a press release.
Team successfully realized double negative differential transconductance
The device controls current flow in a highly distinctive way. Unlike conventional semiconductors, in which current generally increases as voltage rises, this device exhibits negative differential transconductance(NDT), in which current decreases over a certain voltage range. The team successfully realized double negative differential transconductance(D-NDT), in which this phenomenon occurs twice in succession within a single device. In simple terms, the technology allows a single device to handle tasks that would normally be divided among multiple devices, thereby reducing circuit complexity, as per the release.
The multi-functional ZnO–Te heterojunction device exhibiting double negative differential transconductance (D-NDT) characteristics is presented, according to the study published in Advanced Functional Materials. The results suggest that the ZnO–Te D-NDT device offers a promising pathway for realizing area-efficient and multi-functional integrated circuits for future electronics.
Using this device, the team implemented a frequency quadrupler that converts one input signal into four output signals. This function would typically require multiple transistors, but the new technology achieves it with a single device, reducing the number of required transistors by 75%. In actual circuit experiments, the researchers also confirmed that data processing speed increased fourfold within a single input signal cycle.
The device controls current flow in a highly distinctive way. Unlike conventional semiconductors, in which current generally increases as voltage rises, this device exhibits negative differential transconductance(NDT), in which current decreases over a certain voltage range. The team successfully realized double negative differential transconductance(D-NDT), in which this phenomenon occurs twice in succession within a single device. In simple terms, the technology allows a single device to handle tasks that would normally be divided among multiple devices, thereby reducing circuit complexity.

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