LG Innotek Advances Embedded Substrates With Silicon Capacitors
LG Innotek has unveiled an embedded flip-chip ball grid array (FC-BGA) substrate with silicon capacitors integrated inside the package substrate for artificial intelligence chips. The company is also developing technology to embed active devices and bridges. Demand for embedded substrates, particularly FC-BGAs, is growing as higher-performance AI chips require more stable power delivery.
LG Innotek displayed FC-BGA samples with embedded silicon capacitors at KPCA Show 2026, held at Songdo Convensia in Incheon on Sept. 9. The company showed two structures, with silicon capacitors embedded in either the substrateβs core layer or buildup layer.
The core-layer structure accommodates relatively thick, high-capacitance silicon capacitors. The buildup-layer structure embeds thinner silicon capacitors to reduce overall substrate thickness. LG Innotek said the location and specifications of the embedded silicon capacitors can be varied depending on the semiconductor and substrate design.
A silicon capacitor is a passive component made by forming dielectric and electrode layers on a silicon wafer. It stores power required by a semiconductor and supplies it instantaneously to suppress voltage fluctuations. Conventionally, capacitors are mounted on the substrate surface and deliver power to the chip through copper interconnects. Embedding capacitors inside the substrate shortens the power-delivery distance between the semiconductor and capacitor while freeing up mounting area on the substrate surface.
Silicon capacitors are particularly suited to stable power delivery at high frequencies because of their low equivalent series inductance (ESL). AI semiconductors operate at high speeds and can draw large amounts of power instantaneously. Lower ESL helps suppress voltage fluctuations.
Major silicon capacitor suppliers include Murata and Samsung Electro-Mechanics. TSMC also uses internally produced silicon-based deep trench capacitors (DTCs) in advanced packaging.
LG Innotek has been developing embedding technology for about a decade. It initially embedded multilayer ceramic capacitors (MLCCs) in flip-chip chip-scale packages (FC-CSPs). As the AI semiconductor market expanded, the company unveiled FC-BGA technology with embedded silicon capacitors in 2024 and began applying it to mass-produced products last year.
LG Innotek is also developing technology to embed active devices and bridges inside FC-BGAs, in addition to passive components such as silicon capacitors and inductors. Active devices directly control signals and power, while bridges connect multiple chips over short distances to support high-speed signal transmission. The goal is to expand the substrateβs role beyond simply connecting semiconductors to the mainboard.
βWe have applied embedding technology for about 10 years, beginning with passive components inside FC-CSPs,β an LG Innotek official said. βIt is attracting renewed attention as FC-BGAs become more advanced.β
βIn the past, substrates simply served as a medium for transmitting signals, but they are now evolving to provide functionality themselves by incorporating silicon capacitors, inductors and other components,β the official said. βMoving components from the substrate surface to the inside gives customers greater design flexibility and enables thinner products.β