New W-band gallium nitride chip fast-tracked from lab to market in six months

Northrop Grumman has developed a new gallium nitride (GaN) microwave chip that operates in the W-band spectrum, a high-frequency range used for advanced radar, satellite communications, and emerging wireless networks.
The company said the chip was designed, manufactured, and made market-ready in less than six months, an unusually short timeline for a high-frequency semiconductor intended for defense and commercial applications.
Built at Northrop Grumman’s semiconductor facility in Redondo Beach, California, the chip is designed to strengthen wireless signals while operating at frequencies capable of transmitting large amounts of data with low latency.
According to the company, the technology could support secure military communications, next-generation radar systems, satellite links, and future 5G and 6G wireless networks.
Faster signals, smaller hardware
The W-band occupies frequencies between roughly 75 and 110 gigahertz, offering significantly more bandwidth than lower-frequency wireless systems. The added spectrum can help enable faster data transmission, higher-resolution sensing, and more secure communications.
W-band technologies are attracting growing interest because they can handle far larger amounts of data than many conventional wireless systems. The frequencies are increasingly being explored for applications ranging from high-resolution imaging and advanced sensing to satellite communications and future mobile networks.

However, operating at such high frequencies requires specialized semiconductor materials and designs capable of maintaining performance while managing power and heat, areas where GaN-based devices have gained increasing attention.
Northrop Grumman said the new chip fully utilizes this portion of the radio spectrum to improve signal performance while reducing the need for larger and more power-intensive equipment.
Gallium nitride has become a key material for advanced radio-frequency electronics because it can operate at higher power levels and frequencies than conventional silicon-based devices. The material is already widely used in military radars, electronic warfare systems, and satellite communications hardware.
The company said the chip can act as a signal amplifier, helping wireless systems transmit and receive data more efficiently. In military applications, that could improve secure communications and data transfer between platforms and satellites. Commercially, the technology could help support future wireless networks as demand for higher data rates continues to grow.
Defense To 6G
The project was developed through the California DREAMS hub of the Microelectronics Commons program, a public-private initiative aimed at accelerating domestic semiconductor innovation.
The program is funded by the Office of the Under Secretary of Defense for Research and Engineering and brings together industry, government, and academic partners to speed the development of advanced microelectronics technologies.
Northrop Grumman said the rapid development cycle demonstrates how collaborative manufacturing and design efforts can shorten the path from concept to deployment.
The company manufactures microelectronics at two US-based facilities and produces millions of semiconductor components annually for defense and commercial customers. Its Microelectronics Center has been involved in semiconductor development for more than seven decades.
As governments and industries seek faster communications, more capable radar systems, and advanced sensing technologies, high-frequency GaN devices are expected to play an increasingly important role in future wireless infrastructure.