IMAGIS said Chief Executive Officer Lee Dong-seop, who was appointed in March, has resigned after serving for just four months.

The company disclosed on July 31 that its board approved the resignation at a meeting held the same day. Lee stepped down before completing his term, which was scheduled to run through March 2029. The company did not disclose the reason for his departure.

Chairman Kim Jung-chul will return as chief executive. Born in 1964, Kim has led IMAGIS since the 2000s and is currently the company's largest shareholder with an 18.43% stake.

In March, IMAGIS appointed Lee, a former SK hynix executive, as CEO. At the time, the company said it planned to expand into physical AI and robotics-based solutions, adding that the appointment was intended to drive revenue growth and strengthen management accountability.

Since then, the company has secured a major new order. On June 8, IMAGIS announced an automotive semiconductor supply contract worth approximately 5.8 billion won. The deal was equivalent to 43.71% of the company's revenue of about 13.2 billion won in the previous year and marked a significant win as the company seeks to recover from three consecutive years of losses since 2023.

IMAGIS has projected revenue of 21.0 billion won for 2026, which would represent its highest annual sales since 2017.

The leadership change comes as the company works to capitalize on growing opportunities in automotive semiconductors and next-generation AI-related applications.

Samsung Electronics' next-generation gallium nitride (GaN) power semiconductor foundry project has encountered a setback during trial production, raising concerns that commercial production may be delayed beyond this year. The issue emerged after some test chips reportedly failed to operate under extended high-temperature conditions.

According to multiple industry sources on July 31, Samsung has established a dedicated 8-inch GaN semiconductor foundry line at its Giheung campus in Yongin with monthly capacity of approximately 1,300 to 1,500 wafers. The company recently conducted trial production of chips designed by fabless semiconductor companies. During testing, some of the chips reportedly stopped functioning after being exposed to temperatures of 100 to 200 degrees Celsius for roughly 1,000 hours.

GaN semiconductors are commonly used in high-voltage applications of up to 1,200 volts and in environments exceeding 200 degrees Celsius. Their ability to operate reliably under high-temperature conditions has made them increasingly attractive for electric vehicles, robotics and data center applications. Industry sources said the reported reliability issues could limit the usability of chips manufactured using the current process.

Samsung is said to be investigating the root cause of the problem. Industry sources identified the wafer manufacturing process as a leading area of focus. According to those sources, process modifications introduced to achieve targeted device performance may have contributed to the reliability issue.

GaN devices are typically fabricated on epitaxial wafers, in which a GaN layer is grown on a silicon (Si) wafer through an epitaxy process. If the quality or structure of the GaN layer is not fully optimized, defects can become more pronounced under high-temperature and high-voltage operating conditions. Samsung manufactures its own epitaxial wafers using metal-organic chemical vapor deposition (MOCVD) equipment.

A person familiar with the matter said Samsung may have focused on achieving the target threshold voltage of 2 to 3 volts for power semiconductors while overlooking potential effects on device longevity. GaN semiconductors generally require a threshold voltage of around 2 volts. If the threshold voltage is too low, the device may respond to very small currents and become more susceptible to operational errors.

Samsung reorganized its LED business in 2023 and established the Compound Semiconductor Solutions (CSS) division to focus on GaN semiconductors. The division originally planned to launch a dedicated GaN foundry line in 2025. However, weaker-than-expected conditions in the power semiconductor market prompted Samsung to postpone the schedule to the end of 2026.

Industry sources now believe the latest reliability issue could push the timeline back by several additional months. One Samsung GaN foundry customer, speaking on condition of anonymity, said Samsung had already entered the market later than competitors because the company prioritized major businesses such as memory semiconductors. Companies including Infineon Technologies, STMicroelectronics, Texas Instruments and Innoscience have already been shipping GaN semiconductors commercially for one to two years.

Some fabless semiconductor companies are reportedly evaluating alternative foundry partners until Samsung resolves the issue. Potential alternatives include GlobalFoundries, Powerchip Semiconductor Manufacturing Corporation and X-FAB. Unlike silicon semiconductors, where mask costs are typically high enough to encourage production at a single foundry, compound semiconductor mask costs are relatively lower, making it less burdensome to work with multiple manufacturing partners.

A Samsung Electronics representative said the company is still in the pre-production stage and is working through normal development challenges.

"It is part of the process of addressing trial-and-error issues before mass production," the representative said. "It is too early to determine whether these findings constitute a defect."

Intel posted results that beat market expectations on surging demand from artificial intelligence (AI) data centers. With its third-quarter outlook also exceeding expectations, the company's shares jumped about 9% in after-hours trading.

Intel said in second-quarter results released on July 23 local time that revenue rose 25% from a year earlier to $16.1 billion, well above the market forecast of $14.4 billion. Adjusted earnings per share came to $0.42, double the market forecast of $0.21.

Demand for server central processing units (CPUs) led Intel's second-quarter performance. Revenue from its data center and AI business was about $6.26 billion, above the market estimate of $5.37 billion. Intel said earlier this year that CPU orders had exceeded its production capacity.

Revenue from the notebook and desktop PC business was about $8.88 billion, against a market estimate of $7.89 billion. Intel said the share of low-cost PC chips was reduced while the share of high-specification chips expanded, and that although unit sales declined, the average selling price (ASP) rose.

The foundry business, long a sore point for the company, posted revenue of $5.77 billion, above the market estimate of $5.55 billion. It is still in the red, however, with a loss of about $2.089 billion.

Internal transactions in the second quarter came to about $5.5 billion. Internal transactions refer to dealings between business units within the company. They are counted as revenue for each business unit but are deducted when calculating consolidated revenue to prevent double counting.

The third-quarter outlook also exceeded market expectations. Intel guided for third-quarter revenue of $15.8 billion to $16.8 billion and adjusted earnings per share of 38 cents. The average revenue estimate among analysts compiled by LSEG was $15.1 billion, with adjusted earnings per share of 27 cents.

Intel has also secured long-term supply contracts that promise recurring revenue. Chief Financial Officer David Zinsner told Reuters that the company has signed three- to five-year contracts with customers covering server CPUs and XPUs. Some contracts include both volume and pricing, and can be renegotiated depending on market conditions.

Intel is also raising capital expenditures to match growing demand. "We have raised this year's capital spending outlook to $20 billion from $18 billion," Zinsner said. "We expect next year's investment to increase meaningfully as well."

"AI is driving an unprecedented level of demand for computing," Intel Chief Executive Officer Lip-Bu Tan said. "We can drive sustained growth in areas such as CPUs, application-specific integrated circuits (ASICs), advanced packaging and foundry." He added, "The second-quarter results mark the highest revenue growth rate in the past 15 years," saying that "fast execution, accountable management and a customer-focused strategy made it possible."

SK Hynix is discussing a plan to jointly operate Intel’s semiconductor fabrication facility in Ohio rather than acquire it, according to a media report.

U.S. news outlet Semafor reported on July 22 that Intel is seeking a partner to operate its semiconductor fab in Ohio. Citing people familiar with the matter, the report said SK Hynix is discussing a joint operating arrangement instead of an acquisition. It added that the two companies have not begun formal negotiations and that discussions remain at an early stage.

The possibility of a joint operation has emerged as Intel’s Ohio fab project continues to face delays. Intel broke ground on the Ohio facility in 2022 with a planned investment of 28 billion dollars. The site spans about 1.2 million pyeong and is large enough to accommodate a total of eight semiconductor fabs. The site is comparable in scale to the Yongin semiconductor cluster being developed by SK Hynix in Yongin, Gyeonggi Province, which covers about 1.26 million pyeong.

Intel had originally planned to open the Ohio fab in 2025 but postponed completion to 2030 last year. The company was facing financial difficulties at the time and also carried out large-scale restructuring of its foundry business. An Intel spokesperson said, “Our commitment to the Ohio fab remains unchanged,” adding that the company continues to invest in accelerating construction of the site.

A shortage of memory semiconductor supply is also strengthening the rationale for potential cooperation between SK Hynix and Intel. SK Hynix is expanding memory production capacity by building additional semiconductor fabs in Yongin, Cheongju, and Indiana, but believes further capacity will still be needed. SK Group Chairman Chey Tae-won also said at the Korea Chamber of Commerce and Industry (KCCI) Jeju Forum on July 15 that the company needs to build additional semiconductor plants, including in the United States, and is currently searching for suitable locations.

Building a new fab requires significant time from site selection through mass production. Utilizing a site where construction has already progressed could allow production capacity to be secured more quickly. The Ohio fab is reported to have completed part of its foundational construction.

SK Hynix did not deny the possibility of a joint operation. Asked whether the company had discussed jointly operating the Ohio fab with Intel, an SK Hynix spokesperson said, “We cannot confirm that.”

Nvidia has begun shipping its next-generation Vera Rubin AI platform to customers, marking the commercial rollout of the company's latest rack-scale computing architecture for AI factories.

The company announced on July 21 that Vera Rubin has entered volume production and is already running in customer data centers. Nvidia had previously announced Vera Rubin's entry into mass production on June 1. Customers include Google, Microsoft, Oracle and CoreWeave.

Vera Rubin is a rack-scale AI infrastructure platform that tightly integrates 36 Nvidia Vera CPUs, 72 Rubin GPUs, NVLink 6 interconnects and storage into a single system. The compute tray eliminates internal cables, fans and hoses, reducing assembly time from several hours to about one minute.

The Vera CPU is Nvidia's first server processor designed in-house specifically for AI infrastructure. It features 88 custom Olympus CPU cores and is designed to deliver up to 1.8x the performance of conventional x86 processors while providing three times greater inter-core bandwidth and 40% lower memory latency.

Nvidia said Vera Rubin significantly reduces both power consumption and AI inference costs compared with the previous generation. Benchmark testing on CoreWeave's cloud platform showed the system delivers 10 times more AI throughput per megawatt than Grace Blackwell NVL72, substantially lowering the cost per generated token. The company said tokens per megawatt has become a key metric for AI infrastructure because it measures how much AI work can be performed within a fixed power budget.

The platform also supports liquid cooling with coolant inlet temperatures of up to 45 degrees Celsius, enabling chiller-free dry cooling in suitable environments. Nvidia said the design can save millions of gallons of water annually per megawatt of deployed computing capacity.

AMD will begin supplying its Helios AI systems to Microsoft in the second half of this year, the company announced on July 20.

Microsoft will deploy Helios in its Azure cloud platform to support customer AI models and inference workloads. The rollout expands the partnership between the two companies following Microsoft's adoption of AMD's MI300X graphics processing units (GPUs) in 2023.

Microsoft will also introduce two new virtual machine (VM) series, Azure HDv2 and Azure HXv2. The companies jointly designed the HDv2 VM platform, which is optimized for agentic AI workloads, while the HXv2 series targets electronic design automation (EDA) applications.

Beyond Microsoft, AMD has secured Meta, OpenAI, and Oracle as Helios customers.

Meta announced in February that it plans to deploy AMD GPUs across 6 gigawatts (GW) of AI infrastructure and is expected to utilize approximately 1GW of Helios capacity this year. OpenAI and Oracle also plan to deploy Helios beginning this year.

Helios is AMD's rack-scale AI system that integrates GPUs, central processing units (CPUs), networking equipment and cooling infrastructure into a single platform. AMD first unveiled plans earlier this year to launch the system in the second half of 2026.

Each Helios rack is equipped with 72 AMD Instinct MI455X GPUs and 18 sixth-generation EPYC "Venice" CPUs. Built on an open rack architecture, the platform is compatible with third-party GPUs and CPUs.

The system also incorporates AMD's Pensando data processing unit (DPU). AMD strengthened its networking portfolio through the acquisition of Pensando Systems in 2022.

The MI455X is AMD's first GPU to feature HBM4 (High Bandwidth Memory 4). In March, AMD signed a strategic memorandum of understanding with Samsung Electronics to use Samsung's HBM4 memory in the MI455X.

Samsung's HBM4 delivers data transfer speeds of up to 13 Gbps and memory bandwidth of 3.3 TB/s.

AMD on July 20 announced the launch of the Ryzen 7 7700X3D, a new processor designed to enhance gaming performance using the company's proprietary 3D V-Cache technology. The processor is priced at $329.

The Ryzen 7 7700X3D is an enhanced version of the Ryzen 7 7700X aimed at the high-end PC market. Its primary distinction from the existing model is the addition of AMD's 3D V-Cache technology. According to the company's internal testing, the new processor delivers up to 9% higher gaming performance than the Ryzen 7 7700X. It is compatible with AMD's AM5 platform.

3D V-Cache is a packaging technology that vertically stacks additional cache memory on top of the processor cores. In this configuration, the stacked cache die sits between the cores and the cooler, which limits heat dissipation — a key reason AMD caps clock speeds on first-generation 3D V-Cache chips such as the 7700X3D. AMD currently employs 3D V-Cache technology across its Ryzen and EPYC processor families.

The Ryzen 7 7700X3D supports DDR5 memory with capacities of up to 128GB. It features a total cache capacity of 104MB, a 120W thermal design power (TDP), and a maximum boost clock of 4.5GHz. The processor is equipped with eight cores and 16 threads and is designed to operate at temperatures of up to 89 degrees Celsius.